Shedding light on electronically doped perovskites

Halide perovskites solar cells (PSCs) are making true on past promises, having reached power conversion efficiencies (PCEs) of 25.7% and long lifespans (>3000 h). Although stability has become the focus research efforts, a significant number researchers still dedicated to further increasing cell efficiency. To push PCE any higher however, every element must be controlled optimized. In context recent advancements in halide perovskite doping, we analyse how why doping can modify PSCs. We find that optimal levels highly dependent carrier mobilities device architecture, namely whether hole- or electron-transport layer front-side (illumination-side) device. More precisely, there four regimes defined by which different physical processes more, less, important causing change level. When electron hole comparable, diffusion lengths not at least an order magnitude larger than film thickness, devices with front side (n-i-p) perform better p-doped perovskite, whereas hole-transport (p-i-n) n-doped perovskite. The existence these is especially pronounced for PSCs due very high absorption coefficients rather low perovskites. model employing drift-diffusion simulation SCAPS (a Solar Cell Capacitance Simulator) provide full rationale phenomenon conditions under this effect significant. findings presented here based properties measured multiple groups directed predominantly towards experimentalists working devices.